Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

Valdivieso, Carlos|||0000-0002-4259-931X; Crespo Yepes, Albert|||0000-0003-4618-651X; Miranda, R.; Bernal, D.; Martin Martinez, Javier|||0000-0001-5938-5898; Rodríguez Martínez, Rosana|||0000-0002-4565-6703; Nafria, Montserrat|||0000-0002-9549-2890

Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are th...

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Detalles Bibliográficos
Autores:	Valdivieso, Carlos\|\|\|0000-0002-4259-931X, Crespo Yepes, Albert\|\|\|0000-0003-4618-651X, Miranda, R., Bernal, D., Martin Martinez, Javier\|\|\|0000-0001-5938-5898, Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703, Nafria, Montserrat\|\|\|0000-0002-9549-2890
Tipo de recurso:	artículo
Fecha de publicación:	2023
País:	España
Institución:	Universitat Autònoma de Barcelona
Repositorio:	Dipòsit Digital de Documents de la UAB
Idioma:	inglés
OAI Identifier:	oai:ddd.uab.cat:283399
Acceso en línea:	https://ddd.uab.cat/record/283399 https://dx.doi.org/urn:doi:10.1016/j.sse.2023.108625
Access Level:	acceso abierto
Palabra clave:	Aging BTI FD-SOI HCI NW-FETs OFF-State Reliability Stress

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spelling	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETsValdivieso, Carlos\|\|\|0000-0002-4259-931XCrespo Yepes, Albert\|\|\|0000-0003-4618-651XMiranda, R.Bernal, D.Martin Martinez, Javier\|\|\|0000-0001-5938-5898Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703Nafria, Montserrat\|\|\|0000-0002-9549-2890AgingBTIFD-SOIHCINW-FETsOFF-StateReliabilityStressIn this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor. 22023-01-0120232023-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/283399https://dx.doi.org/urn:doi:10.1016/j.sse.2023.108625reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2833992026-06-06T12:50:31Z
dc.title.none.fl_str_mv	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
title	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
spellingShingle	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs Valdivieso, Carlos\|\|\|0000-0002-4259-931X Aging BTI FD-SOI HCI NW-FETs OFF-State Reliability Stress
title_short	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
title_full	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
title_fullStr	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
title_full_unstemmed	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
title_sort	Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
dc.creator.none.fl_str_mv	Valdivieso, Carlos\|\|\|0000-0002-4259-931X Crespo Yepes, Albert\|\|\|0000-0003-4618-651X Miranda, R. Bernal, D. Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author	Valdivieso, Carlos\|\|\|0000-0002-4259-931X
author_facet	Valdivieso, Carlos\|\|\|0000-0002-4259-931X Crespo Yepes, Albert\|\|\|0000-0003-4618-651X Miranda, R. Bernal, D. Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author_role	author
author2	Crespo Yepes, Albert\|\|\|0000-0003-4618-651X Miranda, R. Bernal, D. Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author2_role	author author author author author author
dc.subject.none.fl_str_mv	Aging BTI FD-SOI HCI NW-FETs OFF-State Reliability Stress
topic	Aging BTI FD-SOI HCI NW-FETs OFF-State Reliability Stress
description	In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor.
publishDate	2023
dc.date.none.fl_str_mv	2 2023-01-01 2023 2023-01-01
dc.type.none.fl_str_mv	Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	https://ddd.uab.cat/record/283399 https://dx.doi.org/urn:doi:10.1016/j.sse.2023.108625
url	https://ddd.uab.cat/record/283399 https://dx.doi.org/urn:doi:10.1016/j.sse.2023.108625
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.relation.none.fl_str_mv	Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.source.none.fl_str_mv	reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona
instname_str	Universitat Autònoma de Barcelona
reponame_str	Dipòsit Digital de Documents de la UAB
collection	Dipòsit Digital de Documents de la UAB
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Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

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