Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging agi...
| Autores: | , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:283393 |
| Acesso em linha: | https://ddd.uab.cat/record/283393 https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108324 |
| Access Level: | acceso abierto |
| Palavra-chave: | Aging BTI FD-SOI HCI OFF-State NW-FETs Reliability Stress |
| Resumo: | In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging aging mechanisms in these devices while N/PBTI produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging largely distorts the ID-VG curves of the transistor, leading to an almost linear dependence on VG. |
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