Resistive switching like-behavior in FD-SOI Ω-gate transistors
In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characte...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:283391 |
| Acceso en línea: | https://ddd.uab.cat/record/283391 https://dx.doi.org/urn:doi:10.1016/j.sse.2023.108759 |
| Access Level: | acceso abierto |
| Palabra clave: | FD-SOI Nanowires Resistive switching |
| Sumario: | In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented. |
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