A statistical characterization of dielectric breakdown in FDSOI nanowire transistors
In this work, dielectric breakdown (BD) and post-BD conduction in ultimate FDSOI nanowire (NW) transistors with Ω-gate and high-k dielectric have been investigated. The experiments show that BD in largely scaled NW transistors differ significantly from that in bulk planar transistors. Several types...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2026 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:321921 |
| Acceso en línea: | https://ddd.uab.cat/record/321921 https://dx.doi.org/urn:doi:10.1016/j.mee.2025.112422 |
| Access Level: | acceso abierto |
| Palabra clave: | Dielectric breakdown Failure FD-SOI High-k Lifetime NW FETs Power consumption Reliability |
| Sumario: | In this work, dielectric breakdown (BD) and post-BD conduction in ultimate FDSOI nanowire (NW) transistors with Ω-gate and high-k dielectric have been investigated. The experiments show that BD in largely scaled NW transistors differ significantly from that in bulk planar transistors. Several types of post-BD behaviours have been observed, some of which not only hinder the device performance, but also jeopardize the integrity of the nanowire structure and materials. A comprehensive study of the phenomena has been performed on pMOS and nMOS with different widths and lengths, under different temperature conditions. |
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