Dielectric breakdown in ultra-thin Hf based gate stacks

In this work, the temperature dependence of the resistive switching-related currents (gate and drain) in MOSFETs with ultra-thin Hf based high-k dielectric has been analyzed, for the two dielectric conductivity states. The two different conductive states of the resistive switching have been associat...

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Autores: Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Martin Martinez, Javier|||0000-0001-5938-5898, Crespo Yepes, Albert|||0000-0003-4618-651X, Porti i Pujal, Marc|||0000-0001-7438-3823, Nafria, Montserrat|||0000-0002-9549-2890, Aymerich Humet, Xavier|||0000-0002-5874-6257
Formato: artículo
Fecha de publicación:2012
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:138448
Acesso em linha:https://ddd.uab.cat/record/138448
https://dx.doi.org/urn:doi:10.1149/2.012206jes
Access Level:acceso abierto
Palavra-chave:Dielectric breakdown (BD)
BD reversibility
High-k
Reliability
CMOS
Resistive switching
MOSFET
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spelling Dielectric breakdown in ultra-thin Hf based gate stacksa resistive switching phenomenonRodríguez Martínez, Rosana|||0000-0002-4565-6703Martin Martinez, Javier|||0000-0001-5938-5898Crespo Yepes, Albert|||0000-0003-4618-651XPorti i Pujal, Marc|||0000-0001-7438-3823Nafria, Montserrat|||0000-0002-9549-2890Aymerich Humet, Xavier|||0000-0002-5874-6257Dielectric breakdown (BD)BD reversibilityHigh-kReliabilityCMOSResistive switchingMOSFETIn this work, the temperature dependence of the resistive switching-related currents (gate and drain) in MOSFETs with ultra-thin Hf based high-k dielectric has been analyzed, for the two dielectric conductivity states. The two different conductive states of the resistive switching have been associated to the breakdown (BD) and BD recovery of the dielectric. The results about the temperature dependence of the post-BD gate current are in agreement with those obtained from the study of the injected charge to recovery, a useful parameter to analyze the switch from the high to the low conductivity state. The drain current in the MOSFETs, for the two conductivity states, for different locations of the BD path along the channel (source and drain) and several temperatures has also been studied. The results are a contribution for a better understanding of the resistive switching phenomenon in ultra-thin gate dielectrics, which could be useful for the developing of models to describe BD reversibility. 22012-01-0120122012-01-01Articlehttp://purl.org/coar/resource_type/c_6501SMURhttp://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/138448https://dx.doi.org/urn:doi:10.1149/2.012206jesreponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Ciencia e Innovación https://doi.org/10.13039/501100004837 TEC2010-16126Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 TEC2010-10021-EAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2009/SGR-783open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1384482026-06-06T12:50:31Z
dc.title.none.fl_str_mv Dielectric breakdown in ultra-thin Hf based gate stacks
a resistive switching phenomenon
title Dielectric breakdown in ultra-thin Hf based gate stacks
spellingShingle Dielectric breakdown in ultra-thin Hf based gate stacks
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Dielectric breakdown (BD)
BD reversibility
High-k
Reliability
CMOS
Resistive switching
MOSFET
title_short Dielectric breakdown in ultra-thin Hf based gate stacks
title_full Dielectric breakdown in ultra-thin Hf based gate stacks
title_fullStr Dielectric breakdown in ultra-thin Hf based gate stacks
title_full_unstemmed Dielectric breakdown in ultra-thin Hf based gate stacks
title_sort Dielectric breakdown in ultra-thin Hf based gate stacks
dc.creator.none.fl_str_mv Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author Rodríguez Martínez, Rosana|||0000-0002-4565-6703
author_facet Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author_role author
author2 Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Dielectric breakdown (BD)
BD reversibility
High-k
Reliability
CMOS
Resistive switching
MOSFET
topic Dielectric breakdown (BD)
BD reversibility
High-k
Reliability
CMOS
Resistive switching
MOSFET
description In this work, the temperature dependence of the resistive switching-related currents (gate and drain) in MOSFETs with ultra-thin Hf based high-k dielectric has been analyzed, for the two dielectric conductivity states. The two different conductive states of the resistive switching have been associated to the breakdown (BD) and BD recovery of the dielectric. The results about the temperature dependence of the post-BD gate current are in agreement with those obtained from the study of the injected charge to recovery, a useful parameter to analyze the switch from the high to the low conductivity state. The drain current in the MOSFETs, for the two conductivity states, for different locations of the BD path along the channel (source and drain) and several temperatures has also been studied. The results are a contribution for a better understanding of the resistive switching phenomenon in ultra-thin gate dielectrics, which could be useful for the developing of models to describe BD reversibility.
publishDate 2012
dc.date.none.fl_str_mv 2
2012-01-01
2012
2012-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
SMUR
http://purl.org/coar/version/c_71e4c1898caa6e32
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/138448
https://dx.doi.org/urn:doi:10.1149/2.012206jes
url https://ddd.uab.cat/record/138448
https://dx.doi.org/urn:doi:10.1149/2.012206jes
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 TEC2010-16126
Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 TEC2010-10021-E
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2009/SGR-783
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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