Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD,...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:138450 |
| Acceso en línea: | https://ddd.uab.cat/record/138450 https://dx.doi.org/urn:doi:10.1109/TDMR.2010.2098032 |
| Access Level: | acceso abierto |
| Palabra clave: | Dielectric breakdown (BD) BD reversibility High-k Reliability Resistive switching CMOS |
| Sumario: | The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed. |
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