Replication Data for: A statistical characterization of dielectric breakdown in FDSOI nanowire transistors
This dataset contains the results of Ramped Voltage Stresses (Ig-Vg curves) applied to induce the BD of the gate stack of FDSOI nanowire transistors, together with the corresponding post-BD Id-Vd, Id-Vg and Ig-Vg characteristics of the devices. From the data, the BD event and post-BD conduction of s...
| Autores: | , , , , |
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| Tipo de recurso: | conjunto de datos |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consorci de Serveis Universitaris de Catalunya (CSUC) |
| Repositorio: | CORA.Repositori de Dades de Recerca |
| OAI Identifier: | oai:dnet:cora.rdr____::ed3ac6ef26664c35f012f4e48181a8a4 |
| Acceso en línea: | https://doi.org/10.34810/DATA2796 |
| Access Level: | acceso abierto |
| Palabra clave: | Engineering Dielectric Breakdown Post-BD conduction FDSOI Nanowire transistors Reliability |
| Sumario: | This dataset contains the results of Ramped Voltage Stresses (Ig-Vg curves) applied to induce the BD of the gate stack of FDSOI nanowire transistors, together with the corresponding post-BD Id-Vd, Id-Vg and Ig-Vg characteristics of the devices. From the data, the BD event and post-BD conduction of such devices were investigated. The dataset corresponds to the set of data obtained from the experimental measurements without any type of processing. |
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