Recovery of the MOSFET and circuit functionality after the dielectric breakdown of ultra-thin high-k gate stacks
The reversibility of the gate dielectric breakdown in ultra-thin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functi...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:138451 |
| Acceso en línea: | https://ddd.uab.cat/record/138451 https://dx.doi.org/urn:doi:10.1109/LED.2010.2045732 |
| Access Level: | acceso abierto |
| Palabra clave: | Dielectric breakdown Dielectric breakdown reversibility High-k Resistive switching CMOS circuits |
| Sumario: | The reversibility of the gate dielectric breakdown in ultra-thin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the BD recovery. |
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