Reversible dielectric breakdown in ultra Hf based high-k stacks under current limited stresses
The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similaritie...
| Autores: | , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2009 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositório: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglês |
| OAI Identifier: | oai:ddd.uab.cat:138452 |
| Acesso em linha: | https://ddd.uab.cat/record/138452 https://dx.doi.org/urn:doi:10.1016/j.microrel.2009.06.029 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Dielectric breakdown Resistive switching High-k reliability CMOS process |
| Resumo: | The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are discussed. |
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