Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields
The evolution of semiconductor industry and material science has proven to be of great importance in most aspects of contemporary society. Metal-Oxide-Semiconductor (MOS) transistors in Integrated Circuits (IC) have assumed a central position in modern electronic devices as the brick units that buil...
| Autor: | |
|---|---|
| Tipo de recurso: | tesis doctoral |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2019 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1837 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1837 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/MOSFET info:eu-repo/classification/Inspec/Degradation info:eu-repo/classification/Inspec/RTN info:eu-repo/classification/Inspec/Magnetic field info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
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| dc.title.none.fl_str_mv |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| title |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| spellingShingle |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields Oscar Vicente Huerta González info:eu-repo/classification/Inspec/MOSFET info:eu-repo/classification/Inspec/Degradation info:eu-repo/classification/Inspec/RTN info:eu-repo/classification/Inspec/Magnetic field info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 info:eu-repo/classification/cti/2203 |
| title_short |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| title_full |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| title_fullStr |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| title_full_unstemmed |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| title_sort |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields |
| dc.creator.none.fl_str_mv |
Oscar Vicente Huerta González |
| author |
Oscar Vicente Huerta González |
| author_facet |
Oscar Vicente Huerta González |
| author_role |
author |
| dc.contributor.none.fl_str_mv |
Edmundo Antonio Gutiérrez Domínguez |
| dc.subject.none.fl_str_mv |
info:eu-repo/classification/Inspec/MOSFET info:eu-repo/classification/Inspec/Degradation info:eu-repo/classification/Inspec/RTN info:eu-repo/classification/Inspec/Magnetic field info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 info:eu-repo/classification/cti/2203 |
| topic |
info:eu-repo/classification/Inspec/MOSFET info:eu-repo/classification/Inspec/Degradation info:eu-repo/classification/Inspec/RTN info:eu-repo/classification/Inspec/Magnetic field info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 info:eu-repo/classification/cti/2203 |
| description |
The evolution of semiconductor industry and material science has proven to be of great importance in most aspects of contemporary society. Metal-Oxide-Semiconductor (MOS) transistors in Integrated Circuits (IC) have assumed a central position in modern electronic devices as the brick units that build this gigantic industry. The integration density has grown exponentially since their introduction in the 1960s with the aim of increasing their performance. Gordon Moore identified this trend in 1965, predicting the doubling of components in each technological generation in what we know as the Moore’s Law, leading to uninterrupted and stringent efforts to comply with it. To keep track with the roadmap, we have observed technological innovations such as the shrinking of the device dimensions from the micrometer to the nanometer scale, the introduction of new materials in the fabrication steps and the progressive abandonment of the planar design in favor of three-dimensional (3D) structures. Regrettably, the long-term reliability of the transistor performance was compromised with the introduction of these advances. On top of that, the fundamental physical background behind the transistor’s detrimental performance is still not entirely understood but the general agreement on the explanation is defect generation during the device operation over time, particularly in the semiconductor-oxide interface. These oxide charges and interface traps dynamically interacting with the semiconductor charge contribute significantly to the electrical degradation. Eventually, the simulation, modeling, and characterization of defects degrading the transistor performance became an unavoidable subject of study. In the past, as purely electrical characterization techniques could not entirely explain the complex phenomena affecting either the gate-oxide or the interface between the gate-oxide and the silicon substrate, some studies have employed a second variable additionally to the electrical techniques to fill the gaps in the comprehension of trapping effects (e.g. temperature, radiation). This thesis has focused on experimentally studying the trapping/de-trapping dynamics in the semiconductor-oxide interface by introducing a second-order effect applying magnetic fields. The two main types of defects, slow (or deep) and fast (or shallow) traps, are addressed through this novel experimental approach. |
| publishDate |
2019 |
| dc.date.none.fl_str_mv |
2019-02 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/doctoralThesis info:eu-repo/semantics/acceptedVersion |
| format |
doctoralThesis |
| status_str |
acceptedVersion |
| dc.identifier.none.fl_str_mv |
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1837 |
| url |
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1837 |
| dc.language.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
citation:Huerta González, O. V., (2019), Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields, Tesis de Doctorado, Instituto Nacional de Astrofísica, Óptica y Electrónica. |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0 |
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openAccess |
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http://creativecommons.org/licenses/by-nc-nd/4.0 |
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application/pdf |
| dc.publisher.none.fl_str_mv |
Instituto Nacional de Astrofísica, Óptica y Electrónica |
| publisher.none.fl_str_mv |
Instituto Nacional de Astrofísica, Óptica y Electrónica |
| dc.source.none.fl_str_mv |
reponame:Repositorio Institucional del INAOE instname:Instituto Nacional de Astrofísica, Óptica y Electrónica instacron:INAOE |
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Instituto Nacional de Astrofísica, Óptica y Electrónica |
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INAOE |
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INAOE |
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Repositorio Institucional del INAOE |
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Repositorio Institucional del INAOE |
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1858176240769302528 |
| spelling |
Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fieldsOscar Vicente Huerta Gonzálezinfo:eu-repo/classification/Inspec/MOSFETinfo:eu-repo/classification/Inspec/Degradationinfo:eu-repo/classification/Inspec/RTNinfo:eu-repo/classification/Inspec/Magnetic fieldinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203The evolution of semiconductor industry and material science has proven to be of great importance in most aspects of contemporary society. Metal-Oxide-Semiconductor (MOS) transistors in Integrated Circuits (IC) have assumed a central position in modern electronic devices as the brick units that build this gigantic industry. The integration density has grown exponentially since their introduction in the 1960s with the aim of increasing their performance. Gordon Moore identified this trend in 1965, predicting the doubling of components in each technological generation in what we know as the Moore’s Law, leading to uninterrupted and stringent efforts to comply with it. To keep track with the roadmap, we have observed technological innovations such as the shrinking of the device dimensions from the micrometer to the nanometer scale, the introduction of new materials in the fabrication steps and the progressive abandonment of the planar design in favor of three-dimensional (3D) structures. Regrettably, the long-term reliability of the transistor performance was compromised with the introduction of these advances. On top of that, the fundamental physical background behind the transistor’s detrimental performance is still not entirely understood but the general agreement on the explanation is defect generation during the device operation over time, particularly in the semiconductor-oxide interface. These oxide charges and interface traps dynamically interacting with the semiconductor charge contribute significantly to the electrical degradation. Eventually, the simulation, modeling, and characterization of defects degrading the transistor performance became an unavoidable subject of study. In the past, as purely electrical characterization techniques could not entirely explain the complex phenomena affecting either the gate-oxide or the interface between the gate-oxide and the silicon substrate, some studies have employed a second variable additionally to the electrical techniques to fill the gaps in the comprehension of trapping effects (e.g. temperature, radiation). This thesis has focused on experimentally studying the trapping/de-trapping dynamics in the semiconductor-oxide interface by introducing a second-order effect applying magnetic fields. The two main types of defects, slow (or deep) and fast (or shallow) traps, are addressed through this novel experimental approach.La evolución en la industria de semiconductores y ciencia de materiales ha probado ser de gan importancia en muchos aspectos de la sociedad contemporánea. Los transistores Metal-Óxido-Semiconductor (MOS) en circuitos integrados (IC) han asumido un papel central en dispositivos electrónicos modernos como las unidades básicas que construyen esta industria. La densidad de integración de estos dispositivos ha crecido exponencialmente desde su introducción en los años sesenta, con el propósito de incrementar su rendimiento. Gordon Moore identificó esta tendencia en 1965, donde predijo el incremento de componentes al doble en cada nueva generación tecnológica, en lo que conocemos como la Ley de Moore, y que requiere esfuerzos constantes y rigurosos para cumplirla. Para continuar con la hoja de ruta, hemos observado algunas innovaciones tecnológicas como la reducción de las dimensiones de los dispositivos desde la escala micrométrica a la nanométrica, la introducción de nuevos materiales en los procesos de fabricación y el abandono gradual del diseño planar hacia estructuras tridimensionales. Lamentablemente, la fiabilidad a largo plazo del rendimiento del transistor se vio afectada con la introducción de estos avances tecnológicos. Por si fuera poco, aun no se comprende del todo la física fundamental responsable de la deficiencia del rendimiento del transistor, aunque hay un acuerdo general en que la explicación está relacionada a la generación de defectos durante la operación del dispositivo a lo largo del tiempo, particularmente en la interfaz óxido-semiconductor. Estas cargas en el óxido y trampas en la interfaz que interactúan constantemente con la carga en el semiconductor contribuyen a la degradación eléctrica. Era de esperar que la simulación, el modelado y la caracterización de defectos que desgastan el rendimiento del transistor se volvieran temas de estudio. Anteriormente, debido a que las técnicas de caracterización puramente eléctricas no podían explicar completamente el fenómeno que afectaba tanto al óxido de compuerta como a la interfaz con el sustrato de silicio, algunos estudios utilizaron una segunda variable adicional a la caracterización eléctrica para llenar los huecos que existían en los efectos de atrapamiento (temperatura, radiación, etc.).Instituto Nacional de Astrofísica, Óptica y ElectrónicaEdmundo Antonio Gutiérrez Domínguez2019-02info:eu-repo/semantics/doctoralThesisinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1837reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Huerta González, O. V., (2019), Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields, Tesis de Doctorado, Instituto Nacional de Astrofísica, Óptica y Electrónica.info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/18372024-08-28T03:23:00Z |
| score |
14.964248 |