Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters
Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, atwo-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source volta...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2389 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2389 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/DC methods info:eu-repo/classification/Inspec/Physical parameters of MOSFET info:eu-repo/classification/Inspec/RF-MOSFET info:eu-repo/classification/Inspec/Two-port S-parameter measurements. info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, atwo-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device’s model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements. |
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