Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs
We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and h...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2070 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2070 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Nanoscaled MOSFETs info:eu-repo/classification/Inspec/Quantum magnetoconductance info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si–oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices. |
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