Charge trapping dynamics associated to MOSFET degradation: an experimetal approach with magnetic fields
The evolution of semiconductor industry and material science has proven to be of great importance in most aspects of contemporary society. Metal-Oxide-Semiconductor (MOS) transistors in Integrated Circuits (IC) have assumed a central position in modern electronic devices as the brick units that buil...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2019 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1837 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1837 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/MOSFET info:eu-repo/classification/Inspec/Degradation info:eu-repo/classification/Inspec/RTN info:eu-repo/classification/Inspec/Magnetic field info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | The evolution of semiconductor industry and material science has proven to be of great importance in most aspects of contemporary society. Metal-Oxide-Semiconductor (MOS) transistors in Integrated Circuits (IC) have assumed a central position in modern electronic devices as the brick units that build this gigantic industry. The integration density has grown exponentially since their introduction in the 1960s with the aim of increasing their performance. Gordon Moore identified this trend in 1965, predicting the doubling of components in each technological generation in what we know as the Moore’s Law, leading to uninterrupted and stringent efforts to comply with it. To keep track with the roadmap, we have observed technological innovations such as the shrinking of the device dimensions from the micrometer to the nanometer scale, the introduction of new materials in the fabrication steps and the progressive abandonment of the planar design in favor of three-dimensional (3D) structures. Regrettably, the long-term reliability of the transistor performance was compromised with the introduction of these advances. On top of that, the fundamental physical background behind the transistor’s detrimental performance is still not entirely understood but the general agreement on the explanation is defect generation during the device operation over time, particularly in the semiconductor-oxide interface. These oxide charges and interface traps dynamically interacting with the semiconductor charge contribute significantly to the electrical degradation. Eventually, the simulation, modeling, and characterization of defects degrading the transistor performance became an unavoidable subject of study. In the past, as purely electrical characterization techniques could not entirely explain the complex phenomena affecting either the gate-oxide or the interface between the gate-oxide and the silicon substrate, some studies have employed a second variable additionally to the electrical techniques to fill the gaps in the comprehension of trapping effects (e.g. temperature, radiation). This thesis has focused on experimentally studying the trapping/de-trapping dynamics in the semiconductor-oxide interface by introducing a second-order effect applying magnetic fields. The two main types of defects, slow (or deep) and fast (or shallow) traps, are addressed through this novel experimental approach. |
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