Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors

Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum...

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Autores: Vaca, Cesar, Gonzalez, Mireia B., Castan, Helena, Garcia, Hector, Duenas, Salvador, Campabadal, Francesca, Miranda, Enrique, Bailón, Luis
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2016
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/378659
Acceso en línea:http://hdl.handle.net/10261/378659
https://api.elsevier.com/content/abstract/scopus_id/84979493632
Access Level:acceso abierto
Palabra clave:Cryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM).
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
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spelling Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitorsVaca, CesarGonzalez, Mireia B.Castan, HelenaGarcia, HectorDuenas, SalvadorCampabadal, FrancescaMiranda, EnriqueBailón, LuisCryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM).http://metadata.un.org/sdg/9Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovationResistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.Peer reviewedInstitute of Electrical and Electronics EngineersDuenas, Salvador [0000-0002-2328-1752]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252016info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/378659https://api.elsevier.com/content/abstract/scopus_id/84979493632reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésIEEE Transactions on Electron Deviceshttps://ieeexplore.ieee.org/document/7450179Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3786592026-05-22T06:33:51Z
dc.title.none.fl_str_mv Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
title Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
spellingShingle Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
Vaca, Cesar
Cryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM).
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
title_short Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
title_full Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
title_fullStr Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
title_full_unstemmed Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
title_sort Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
dc.creator.none.fl_str_mv Vaca, Cesar
Gonzalez, Mireia B.
Castan, Helena
Garcia, Hector
Duenas, Salvador
Campabadal, Francesca
Miranda, Enrique
Bailón, Luis
author Vaca, Cesar
author_facet Vaca, Cesar
Gonzalez, Mireia B.
Castan, Helena
Garcia, Hector
Duenas, Salvador
Campabadal, Francesca
Miranda, Enrique
Bailón, Luis
author_role author
author2 Gonzalez, Mireia B.
Castan, Helena
Garcia, Hector
Duenas, Salvador
Campabadal, Francesca
Miranda, Enrique
Bailón, Luis
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Duenas, Salvador [0000-0002-2328-1752]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Cryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM).
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
topic Cryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM).
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
description Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.
publishDate 2016
dc.date.none.fl_str_mv 2016
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/378659
https://api.elsevier.com/content/abstract/scopus_id/84979493632
url http://hdl.handle.net/10261/378659
https://api.elsevier.com/content/abstract/scopus_id/84979493632
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv IEEE Transactions on Electron Devices
https://ieeexplore.ieee.org/document/7450179
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424469524611072
score 15,81155

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