Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors
Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/378659 |
| Acceso en línea: | http://hdl.handle.net/10261/378659 https://api.elsevier.com/content/abstract/scopus_id/84979493632 |
| Access Level: | acceso abierto |
| Palabra clave: | Cryogenic measurements | hafnium oxide | memory modeling | nonvolatile memory (NVM) | resistive-switching memory (RRAM). http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed. |
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