Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations

In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the in...

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Autores: García Sánchez, Sergio, Íñiguez-de-la-Torre, Ignacio, García Pérez, Óscar Alberto, Mateos López, Javier, González Sánchez, Tomás, Pérez Santos, María Susana
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/130632
Acceso en línea:http://hdl.handle.net/10366/130632
Access Level:acceso abierto
Palabra clave:Thernal boundary resistance
Heating
Monte-Carlo, Método de
AlGaN/GaN
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spelling Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo SimulationsGarcía Sánchez, SergioÍñiguez-de-la-Torre, IgnacioGarcía Pérez, Óscar AlbertoMateos López, JavierGonzález Sánchez, TomásPérez Santos, María SusanaThernal boundary resistanceHeatingMonte-Carlo, Método deAlGaN/GaNIn this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the influence of the thermal boundary resistance (TBR) that appears in the growth process of dissimilar materials. We analyse the effect of the TBR when the diode is grown on two substrates, Si and SiC. As a conclusion, we can state that the TBR is a limiting factor to the thermal flow that becomes more relevant for substrates with high thermal conductivities.Institute of Physics (Bristol, Gran Bretaña)201620162015info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10366/130632reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésTEC2010-15413SA052U13Attribution-NonCommercial-NoDerivs 3.0 Unportedhttps://creativecommons.org/licenses/by-nc-nd/3.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1306322026-06-07T06:28:51Z
dc.title.none.fl_str_mv Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
title Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
spellingShingle Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
García Sánchez, Sergio
Thernal boundary resistance
Heating
Monte-Carlo, Método de
AlGaN/GaN
title_short Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
title_full Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
title_fullStr Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
title_full_unstemmed Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
title_sort Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
dc.creator.none.fl_str_mv García Sánchez, Sergio
Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author García Sánchez, Sergio
author_facet García Sánchez, Sergio
Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author_role author
author2 Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Thernal boundary resistance
Heating
Monte-Carlo, Método de
AlGaN/GaN
topic Thernal boundary resistance
Heating
Monte-Carlo, Método de
AlGaN/GaN
description In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the influence of the thermal boundary resistance (TBR) that appears in the growth process of dissimilar materials. We analyse the effect of the TBR when the diode is grown on two substrates, Si and SiC. As a conclusion, we can state that the TBR is a limiting factor to the thermal flow that becomes more relevant for substrates with high thermal conductivities.
publishDate 2015
dc.date.none.fl_str_mv 2015
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/130632
url http://hdl.handle.net/10366/130632
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2010-15413
SA052U13
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Physics (Bristol, Gran Bretaña)
publisher.none.fl_str_mv Institute of Physics (Bristol, Gran Bretaña)
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422791515701248
score 15,300719

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