Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamon...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/130679 |
| Acceso en línea: | http://hdl.handle.net/10366/130679 |
| Access Level: | acceso abierto |
| Palabra clave: | Heating Thermal resistance GaN diodes Monte Carlo method |
| Sumario: | In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss. |
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