Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the in...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/130632 |
| Acceso en línea: | http://hdl.handle.net/10366/130632 |
| Access Level: | acceso abierto |
| Palabra clave: | Thernal boundary resistance Heating Monte-Carlo, Método de AlGaN/GaN |
| Sumario: | In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte Carlo simulator by expanding its capabilities with the implementation of two thermal methods. We present the impact on the device temperature of considering different substrates and die dimensions. We also evaluate the influence of the thermal boundary resistance (TBR) that appears in the growth process of dissimilar materials. We analyse the effect of the TBR when the diode is grown on two substrates, Si and SiC. As a conclusion, we can state that the TBR is a limiting factor to the thermal flow that becomes more relevant for substrates with high thermal conductivities. |
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