Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy

3 pages, 4 figures.-- PACS: 78.35.+c; 68.35.Iv; 78.66.Fd

Detalhes bibliográficos
Autores: Assouar, M. B., Jiménez Riobóo, R. J., Vila, M., Alnot, P.
Formato: artículo
Fecha de publicación:2005
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/21736
Acesso em linha:http://hdl.handle.net/10261/21736
Access Level:acceso abierto
Palavra-chave:Aluminium compounds
III-V semiconductors
Wide band gap semiconductors
Brillouin spectra
Surface acoustic waves
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spelling Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopyAssouar, M. B.Jiménez Riobóo, R. J.Vila, M.Alnot, P.Aluminium compoundsIII-V semiconductorsWide band gap semiconductorsBrillouin spectraSurface acoustic waves3 pages, 4 figures.-- PACS: 78.35.+c; 68.35.Iv; 78.66.FdBrillouin spectroscopy has been used to study the effect of the deposition temperature on the surface acoustic wave (SAW) propagation velocity of aluminum nitride (AlN) films. The results show a dependence of the SAW propagation velocity on the growth temperature of AlN films. The highest value of acoustic velocity was obtained for the film elaborated without heating. Structural characterization of the AlN films synthesized at various deposition temperatures was carried out by x-ray diffraction. These analyses pointed out that the deposition temperature influences the standard deviation of (002) AlN film preferred orientation. The growth temperature clearly influences the acoustical and crystalline properties of AlN thin films.This work was partially supported by the Spanish Ministery of Education and Science (Project No. MAT-2003- 01880), the autonomous community of Madrid (Project No. 07N/0077/2002), and by a bilateral cooperation between CNRS and CSIC within the frame of the Picasso program common project Assouar/Jiménez (France) and Acción Integrada 2004FR0008 (Spain).Peer reviewedAmerican Institute of Physics201020102005info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501263016 bytesapplication/pdfhttp://hdl.handle.net/10261/21736reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.2121927info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/217362026-05-22T06:33:51Z
dc.title.none.fl_str_mv Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
title Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
spellingShingle Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
Assouar, M. B.
Aluminium compounds
III-V semiconductors
Wide band gap semiconductors
Brillouin spectra
Surface acoustic waves
title_short Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
title_full Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
title_fullStr Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
title_full_unstemmed Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
title_sort Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy
dc.creator.none.fl_str_mv Assouar, M. B.
Jiménez Riobóo, R. J.
Vila, M.
Alnot, P.
author Assouar, M. B.
author_facet Assouar, M. B.
Jiménez Riobóo, R. J.
Vila, M.
Alnot, P.
author_role author
author2 Jiménez Riobóo, R. J.
Vila, M.
Alnot, P.
author2_role author
author
author
dc.subject.none.fl_str_mv Aluminium compounds
III-V semiconductors
Wide band gap semiconductors
Brillouin spectra
Surface acoustic waves
topic Aluminium compounds
III-V semiconductors
Wide band gap semiconductors
Brillouin spectra
Surface acoustic waves
description 3 pages, 4 figures.-- PACS: 78.35.+c; 68.35.Iv; 78.66.Fd
publishDate 2005
dc.date.none.fl_str_mv 2005
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/21736
url http://hdl.handle.net/10261/21736
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.2121927
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 263016 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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