Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure
8 pages, 11 figures, 1 table.-- PACS number(s): 61.10.Nz, 61.10.Ht, 61.10.Eq, 61.46.-w
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2006 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/19727 |
| Acceso en línea: | http://hdl.handle.net/10261/19727 |
| Access Level: | acceso abierto |
| Palabra clave: | Gallium compounds Aluminium compounds III-V semiconductors Wide band gap semiconductors Semiconductor epitaxial layers Semiconductor quantum dots Nanostructured materials X-ray optics X-ray diffraction X-ray absorption spectra Stress analysis Crystal structures |
| Sumario: | 8 pages, 11 figures, 1 table.-- PACS number(s): 61.10.Nz, 61.10.Ht, 61.10.Eq, 61.46.-w |
|---|