Low density InAs quantum dots with control in energy emission and top surface location
In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to t...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2008 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/11505 |
| Acceso en línea: | http://hdl.handle.net/10261/11505 |
| Access Level: | acceso abierto |
| Palabra clave: | III-V semiconductors Indium compounds Liquid phase epitaxial growth Photoluminescence Semiconductor epitaxial layers Semiconductor growth Semiconductor quantum dots Wide band gap semiconductors |
| Sumario: | In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to tune the QD energy emission over a range of 1.12–1.40 eV while keeping constant the nanostructures density at 2×108 cm−2. Moreover, the capping growth process of these QD shows mounding features that permit their spatial identification once embedded by a GaAs capping layer. |
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