Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dom...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2006 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/18319 |
| Acceso en línea: | http://hdl.handle.net/10261/18319 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Photoluminescence |
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Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layerLiu, H. Y.Steer, M. J.Badcock, T. J.Mowbray, D. J.Skolnick, M. S.Suárez Arias, FerránNg, J. S.Hopkinson, M.David, J. P. R.Indium compoundsGallium arsenideIII-V semiconductorsSemiconductor quantum dotsPhotoluminescenceIt is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed.This work is supported by the U.K. Engineering and Physical Sciences Research Council (EPSRC) (Grant No.GR/S49308/01) and the European Union Network of Excellence “SANDiE” (Contract No. 500101).Peer reviewedAmerican Institute of Physics200920092006info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_650169649 bytesapplication/pdfhttp://hdl.handle.net/10261/18319reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://link.aip.org/link/?JAPIAU/99/046104/1http://dx.doi.org/10.1063/1.2173188info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/183192026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| title |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| spellingShingle |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer Liu, H. Y. Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Photoluminescence |
| title_short |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| title_full |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| title_fullStr |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| title_full_unstemmed |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| title_sort |
Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer |
| dc.creator.none.fl_str_mv |
Liu, H. Y. Steer, M. J. Badcock, T. J. Mowbray, D. J. Skolnick, M. S. Suárez Arias, Ferrán Ng, J. S. Hopkinson, M. David, J. P. R. |
| author |
Liu, H. Y. |
| author_facet |
Liu, H. Y. Steer, M. J. Badcock, T. J. Mowbray, D. J. Skolnick, M. S. Suárez Arias, Ferrán Ng, J. S. Hopkinson, M. David, J. P. R. |
| author_role |
author |
| author2 |
Steer, M. J. Badcock, T. J. Mowbray, D. J. Skolnick, M. S. Suárez Arias, Ferrán Ng, J. S. Hopkinson, M. David, J. P. R. |
| author2_role |
author author author author author author author author |
| dc.subject.none.fl_str_mv |
Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Photoluminescence |
| topic |
Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Photoluminescence |
| description |
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed. |
| publishDate |
2006 |
| dc.date.none.fl_str_mv |
2006 2009 2009 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/18319 |
| url |
http://hdl.handle.net/10261/18319 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://link.aip.org/link/?JAPIAU/99/046104/1 http://dx.doi.org/10.1063/1.2173188 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
69649 bytes application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
| publisher.none.fl_str_mv |
American Institute of Physics |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
| instname_str |
Consejo Superior de Investigaciones Científicas (CSIC) |
| reponame_str |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
| collection |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
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|
| repository.mail.fl_str_mv |
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| _version_ |
1869415735546085376 |
| score |
15,81155 |