Optical investigation of type II GaSb/GaAs self-assembled quantum dots
We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement p...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/11941 |
| Acceso en línea: | http://hdl.handle.net/10261/11941 |
| Access Level: | acceso abierto |
| Palabra clave: | Gallium arsenide Gallium compounds III-V semiconductors Photoconductivity Photoluminescence Self-assembly Semiconductor quantum dots Wetting |
| Sumario: | We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system |
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