Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly...

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Bibliographic Details
Authors: Paskov, P. P., Holtz, P. O., Monemar, B., García Martínez, Jorge Manuel, Schoenfeld, W. V., Petroff, Pierre M.
Format: article
Publication Date:2000
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/25750
Online Access:http://hdl.handle.net/10261/25750
Access Level:Open access
Keyword:Indium compounds
Gallium arsenide
III-V semiconductors
Photoluminescence
Self-assembly
Two-photon processes
Description
Summary:We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states.

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