Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/25750 |
| Acceso en línea: | http://hdl.handle.net/10261/25750 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds Gallium arsenide III-V semiconductors Photoluminescence Self-assembly Two-photon processes |
| Sumario: | We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states. |
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