Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb
Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II b...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2005 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/19336 |
| Acceso en línea: | http://hdl.handle.net/10261/19336 |
| Access Level: | acceso abierto |
| Palabra clave: | Gallium arsenide Indium compounds III-V semiconductors Photoluminescence Semiconductor quantum dots Semiconductor quantum wells Red shift Transmission electron microscopy |
| Sumario: | Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results. |
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