Ti supersaturated Si by microwave annealing processes

Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth p...

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Autores: Olea Ariza, Javier, González Díaz, Germán, Pastor Pastor, David, García Hemme, Eric, Caudevilla Gutiérrez, Daniel, Algaidy, Sari, Pérez Zenteno, Francisco José, Duarte Cano, Sebastián, García Hernansanz, Rodrigo, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique, Martil De La Plaza, Ignacio, Lee, Yao-Jen, Hong, Tzu-Chieh, Chao, Tien-Sheng
Formato: artículo
Fecha de publicación:2023
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/88805
Acesso em linha:https://hdl.handle.net/20.500.14352/88805
Access Level:acceso abierto
Palavra-chave:538.9
Supersaturated
Microwave
Silicon
Titanium
Infrared
Microelectronics
Implantation
Física del estado sólido
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/88805
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repository_id_str
spelling Ti supersaturated Si by microwave annealing processesOlea Ariza, JavierGonzález Díaz, GermánPastor Pastor, DavidGarcía Hemme, EricCaudevilla Gutiérrez, DanielAlgaidy, SariPérez Zenteno, Francisco JoséDuarte Cano, SebastiánGarcía Hernansanz, RodrigoPrado Millán, Álvaro DelSan Andrés Serrano, EnriqueMartil De La Plaza, IgnacioLee, Yao-JenHong, Tzu-ChiehChao, Tien-Sheng538.9SupersaturatedMicrowaveSiliconTitaniumInfraredMicroelectronicsImplantationFísica del estado sólido2211 Física del Estado SólidoMicrowave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.IOP PublishingUniversidad Complutense de Madrid20232023-01-0120232023-01-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/88805reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)InglésengComunidad de Madrid http://dx.doi.org/10.13039/100012818 MADRID-PV2 S2018Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-116508RB-I00Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-117498RB-I00Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016 TEC2017-84378-Ropen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/888052026-06-02T12:44:21Z
dc.title.none.fl_str_mv Ti supersaturated Si by microwave annealing processes
title Ti supersaturated Si by microwave annealing processes
spellingShingle Ti supersaturated Si by microwave annealing processes
Olea Ariza, Javier
538.9
Supersaturated
Microwave
Silicon
Titanium
Infrared
Microelectronics
Implantation
Física del estado sólido
2211 Física del Estado Sólido
title_short Ti supersaturated Si by microwave annealing processes
title_full Ti supersaturated Si by microwave annealing processes
title_fullStr Ti supersaturated Si by microwave annealing processes
title_full_unstemmed Ti supersaturated Si by microwave annealing processes
title_sort Ti supersaturated Si by microwave annealing processes
dc.creator.none.fl_str_mv Olea Ariza, Javier
González Díaz, Germán
Pastor Pastor, David
García Hemme, Eric
Caudevilla Gutiérrez, Daniel
Algaidy, Sari
Pérez Zenteno, Francisco José
Duarte Cano, Sebastián
García Hernansanz, Rodrigo
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
Martil De La Plaza, Ignacio
Lee, Yao-Jen
Hong, Tzu-Chieh
Chao, Tien-Sheng
author Olea Ariza, Javier
author_facet Olea Ariza, Javier
González Díaz, Germán
Pastor Pastor, David
García Hemme, Eric
Caudevilla Gutiérrez, Daniel
Algaidy, Sari
Pérez Zenteno, Francisco José
Duarte Cano, Sebastián
García Hernansanz, Rodrigo
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
Martil De La Plaza, Ignacio
Lee, Yao-Jen
Hong, Tzu-Chieh
Chao, Tien-Sheng
author_role author
author2 González Díaz, Germán
Pastor Pastor, David
García Hemme, Eric
Caudevilla Gutiérrez, Daniel
Algaidy, Sari
Pérez Zenteno, Francisco José
Duarte Cano, Sebastián
García Hernansanz, Rodrigo
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
Martil De La Plaza, Ignacio
Lee, Yao-Jen
Hong, Tzu-Chieh
Chao, Tien-Sheng
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Supersaturated
Microwave
Silicon
Titanium
Infrared
Microelectronics
Implantation
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Supersaturated
Microwave
Silicon
Titanium
Infrared
Microelectronics
Implantation
Física del estado sólido
2211 Física del Estado Sólido
description Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-01-01
2023
2023-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/88805
url https://hdl.handle.net/20.500.14352/88805
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Comunidad de Madrid http://dx.doi.org/10.13039/100012818 MADRID-PV2 S2018
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-116508RB-I00
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-117498RB-I00
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016 TEC2017-84378-R
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300724

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