Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the...

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Detalles Bibliográficos
Autores: Olea Ariza, Javier, González Díaz, Germán, Pastor Pastor, David, García Hemme, Eric, Caudevilla Gutiérrez, Daniel, Algaidy, Sari, Pérez Zenteno, Francisco José, Duarte Cano, Sebastián, García Hernansanz, Rodrigo, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique, Martil De La Plaza, Ignacio
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/88773
Acceso en línea:https://hdl.handle.net/20.500.14352/88773
Access Level:acceso abierto
Palabra clave:537
Detector
Hall
Hyperdoped
Infrared
Silicon
Supersaturated
Titanium
Electricidad
Electrónica (Física)
2202.03 Electricidad
2203 Electrónica
Descripción
Sumario:In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.

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