Ti supersaturated Si by microwave annealing processes

Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth p...

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Detalles Bibliográficos
Autores: Olea Ariza, Javier, González Díaz, Germán, Pastor Pastor, David, García Hemme, Eric, Caudevilla Gutiérrez, Daniel, Algaidy, Sari, Pérez Zenteno, Francisco José, Duarte Cano, Sebastián, García Hernansanz, Rodrigo, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique, Martil De La Plaza, Ignacio, Lee, Yao-Jen, Hong, Tzu-Chieh, Chao, Tien-Sheng
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/88805
Acceso en línea:https://hdl.handle.net/20.500.14352/88805
Access Level:acceso abierto
Palabra clave:538.9
Supersaturated
Microwave
Silicon
Titanium
Infrared
Microelectronics
Implantation
Física del estado sólido
2211 Física del Estado Sólido
Descripción
Sumario:Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.

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