Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

We present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (th...

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Detalles Bibliográficos
Autores: Esquivias, Ignacio, Weisser, Stephan, Romero, Beatriz, Ralston, John
Tipo de recurso: artículo
Fecha de publicación:1996
País:España
Institución:Universidad Rey Juan Carlos
Repositorio:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
OAI Identifier:oai:burjcdigital.urjc.es:10115/12035
Acceso en línea:http://hdl.handle.net/10115/12035
Access Level:acceso abierto
Palabra clave:QUANTUM-WELL
NONLINEAR GAIN
MQW LASERS
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
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spelling Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurementsEsquivias, IgnacioWeisser, StephanRomero, BeatrizRalston, JohnQUANTUM-WELLNONLINEAR GAINMQW LASERS3307 Tecnología Electrónica3306.02 Aplicaciones EléctricasWe present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions, The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers, The effective capture time is estimated to be between 2 and 5 ps.Tecnología ElectrónicaIEEE201420141996info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10115/12035reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlosinstname:Universidad Rey Juan CarlosInglésAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:burjcdigital.urjc.es:10115/120352026-06-24T12:48:17Z
dc.title.none.fl_str_mv Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
title Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
spellingShingle Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, Ignacio
QUANTUM-WELL
NONLINEAR GAIN
MQW LASERS
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
title_short Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
title_full Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
title_fullStr Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
title_full_unstemmed Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
title_sort Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
dc.creator.none.fl_str_mv Esquivias, Ignacio
Weisser, Stephan
Romero, Beatriz
Ralston, John
author Esquivias, Ignacio
author_facet Esquivias, Ignacio
Weisser, Stephan
Romero, Beatriz
Ralston, John
author_role author
author2 Weisser, Stephan
Romero, Beatriz
Ralston, John
author2_role author
author
author
dc.subject.none.fl_str_mv QUANTUM-WELL
NONLINEAR GAIN
MQW LASERS
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
topic QUANTUM-WELL
NONLINEAR GAIN
MQW LASERS
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
description We present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions, The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers, The effective capture time is estimated to be between 2 and 5 ps.
publishDate 1996
dc.date.none.fl_str_mv 1996
2014
2014
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10115/12035
url http://hdl.handle.net/10115/12035
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
instname:Universidad Rey Juan Carlos
instname_str Universidad Rey Juan Carlos
reponame_str BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
collection BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.81155

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