Damping limited modulation bandwidths up to 40 GHz in undoped short-cavity InGaAs-GaAs multiple quantum well lasers

We demonstrate record direct modulation bandwidths from MBE-grown In0.5Ga0.65As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures, Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidt...

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Detalles Bibliográficos
Autores: Weisser, stephan, Larkins, Eric, Czotscher, Konrad, Benz, W, Daleiden, J, Esquivias, Ignacio, Fleissner, J, Ralston, John, Romero, Beatriz, Sah, RE, Schönferlder, Alexander, Rosenzweig, Joseph
Tipo de recurso: artículo
Fecha de publicación:1996
País:España
Institución:Universidad Rey Juan Carlos
Repositorio:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
OAI Identifier:oai:burjcdigital.urjc.es:10115/12034
Acceso en línea:http://hdl.handle.net/10115/12034
Access Level:acceso abierto
Palabra clave:ALGAAS
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
Descripción
Sumario:We demonstrate record direct modulation bandwidths from MBE-grown In0.5Ga0.65As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures, Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 mu m(2) devices at a bias current of 155 mA, which is the damping limit for this structure, We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of similar to 1.1 mu m for these devices.

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