Incorporation of carrier capture and escape processes into a self-consistent cw model for Quantum Well lasers
We describe a one-dimensional model for the simulation of the cw properties of Quantum Well laser diodes, which incorporates self-consistently the carrier capture/escape processes into the complete semiconductor equations. The approach is applied to simulate some laser structures properties that can...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Institución: | Universidad Rey Juan Carlos |
| Repositorio: | BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos |
| OAI Identifier: | oai:burjcdigital.urjc.es:10115/12025 |
| Acceso en línea: | http://hdl.handle.net/10115/12025 |
| Access Level: | acceso abierto |
| Palabra clave: | Quantum Well lasers carrier capture escape processes 3307 Tecnología Electrónica 3306.02 Aplicaciones Eléctricas |
| Sumario: | We describe a one-dimensional model for the simulation of the cw properties of Quantum Well laser diodes, which incorporates self-consistently the carrier capture/escape processes into the complete semiconductor equations. The approach is applied to simulate some laser structures properties that can only be described considering carrier capture effects. We point out the importance of these processes in the performance of high power laser diodes operating under cw conditions |
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