Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
We present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (th...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1996 |
| País: | España |
| Institución: | Universidad Rey Juan Carlos |
| Repositorio: | BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos |
| OAI Identifier: | oai:burjcdigital.urjc.es:10115/12035 |
| Acceso en línea: | http://hdl.handle.net/10115/12035 |
| Access Level: | acceso abierto |
| Palabra clave: | QUANTUM-WELL NONLINEAR GAIN MQW LASERS 3307 Tecnología Electrónica 3306.02 Aplicaciones Eléctricas |
| Sumario: | We present experimental results on the high-frequency electrical impedance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-doping levels in the active region, The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions, The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers, The effective capture time is estimated to be between 2 and 5 ps. |
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