Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells

Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In partic...

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Autores: López Rodríguez, Gema|||0000-0003-4806-5180, Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, Martín García, Isidro|||0000-0001-8833-9057, Voz Sánchez, Cristóbal|||0000-0002-0320-9606, Morales Vilches, Ana Belén, Orpella García, Alberto|||0000-0003-2726-5861, Alcubilla González, Ramón|||0000-0003-4827-4513
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/84884
Acceso en línea:https://hdl.handle.net/2117/84884
https://dx.doi.org/10.1016/j.egypro.2015.07.106
Access Level:acceso abierto
Palabra clave:Solar cells
IBC-BJ
Laser doping
selective emitter
c-Si solar cells
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
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oai_identifier_str oai:upcommons.upc.edu:2117/84884
network_acronym_str ES
network_name_str España
repository_id_str
spelling Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cellsLópez Rodríguez, Gema|||0000-0003-4806-5180Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614XMartín García, Isidro|||0000-0001-8833-9057Voz Sánchez, Cristóbal|||0000-0002-0320-9606Morales Vilches, Ana BelénOrpella García, Alberto|||0000-0003-2726-5861Alcubilla González, Ramón|||0000-0003-4827-4513Solar cellsIBC-BJLaser dopingselective emitterc-Si solar cellsCèl·lules solarsBateries solarsÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solarsÀrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::LàserAbstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layer deposited by atomic layer deposition (ALD). Emitters were fabricated with a light thermal phosphorus diffusion in order to reduce bulk and surface emitter recombination losses. Highly doped regions n++ (emitter) and p++ (base) were simultaneously created in a point-like structure using a pulsed Nd-YAG 1064 nm laser in the nanosecond regime by laser processing the dielectric layers. The results obtained for a cell, 3x3 cm2, are presented. Efficiencies up to 18.1% (Jsc = 39 mA/cm2, Voc = 632 mV, FF = 73.4%) have been achieved in our fabricated IBC cells.20152015-08-2820162016-03-30journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/84884https://dx.doi.org/10.1016/j.egypro.2015.07.106reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2http://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/848842026-05-27T15:37:01Z
dc.title.none.fl_str_mv Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
title Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
spellingShingle Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
López Rodríguez, Gema|||0000-0003-4806-5180
Solar cells
IBC-BJ
Laser doping
selective emitter
c-Si solar cells
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
title_short Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
title_full Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
title_fullStr Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
title_full_unstemmed Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
title_sort Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
dc.creator.none.fl_str_mv López Rodríguez, Gema|||0000-0003-4806-5180
Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X
Martín García, Isidro|||0000-0001-8833-9057
Voz Sánchez, Cristóbal|||0000-0002-0320-9606
Morales Vilches, Ana Belén
Orpella García, Alberto|||0000-0003-2726-5861
Alcubilla González, Ramón|||0000-0003-4827-4513
author López Rodríguez, Gema|||0000-0003-4806-5180
author_facet López Rodríguez, Gema|||0000-0003-4806-5180
Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X
Martín García, Isidro|||0000-0001-8833-9057
Voz Sánchez, Cristóbal|||0000-0002-0320-9606
Morales Vilches, Ana Belén
Orpella García, Alberto|||0000-0003-2726-5861
Alcubilla González, Ramón|||0000-0003-4827-4513
author_role author
author2 Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X
Martín García, Isidro|||0000-0001-8833-9057
Voz Sánchez, Cristóbal|||0000-0002-0320-9606
Morales Vilches, Ana Belén
Orpella García, Alberto|||0000-0003-2726-5861
Alcubilla González, Ramón|||0000-0003-4827-4513
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Solar cells
IBC-BJ
Laser doping
selective emitter
c-Si solar cells
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
topic Solar cells
IBC-BJ
Laser doping
selective emitter
c-Si solar cells
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
description Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layer deposited by atomic layer deposition (ALD). Emitters were fabricated with a light thermal phosphorus diffusion in order to reduce bulk and surface emitter recombination losses. Highly doped regions n++ (emitter) and p++ (base) were simultaneously created in a point-like structure using a pulsed Nd-YAG 1064 nm laser in the nanosecond regime by laser processing the dielectric layers. The results obtained for a cell, 3x3 cm2, are presented. Efficiencies up to 18.1% (Jsc = 39 mA/cm2, Voc = 632 mV, FF = 73.4%) have been achieved in our fabricated IBC cells.
publishDate 2015
dc.date.none.fl_str_mv 2015
2015-08-28
2016
2016-03-30
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/84884
https://dx.doi.org/10.1016/j.egypro.2015.07.106
url https://hdl.handle.net/2117/84884
https://dx.doi.org/10.1016/j.egypro.2015.07.106
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2

http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2

http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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