TCO-free low-temperature p+ emitters for back-junction c-Si solar cells
In this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the rear side of the cell and it consists of point-like laser-diffused p+ regions...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/175404 |
| Acceso en línea: | https://hdl.handle.net/2117/175404 https://dx.doi.org/10.1016/j.egypro.2015.07.042 |
| Access Level: | acceso abierto |
| Palabra clave: | Solar cells DopLa cell Laser doping Back-junction c-Si solar cells Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
| Sumario: | In this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the rear side of the cell and it consists of point-like laser-diffused p+ regions with a surface charge induced emitter in between based on the high negative charge located at the Al2O3/c-Si interface. These emitters are fabricated at low temperature (< 400 °C) and could be directly compared to silicon heterojunction emitters with the advantage that the deposition of a Transparent Conductive Oxide (TCO) film can be avoided, since they are based on p+/n c-Si homojunctions. Additionally, the involved films are transparent to the IR photons ( >1000 nm) that reach the rear surface of the cell resulting in an excellent back reflector. We fabricated solar cells with distance between p+ regions or pitch ranging from 200 to 350 µm with a front surface based on silicon heterojunction technology. Best efficiency (18.1%) is obtained for a pitch of 250 µm as a consequence of the trade-off between Voc and FF values. |
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