Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In partic...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/84884 |
| Acceso en línea: | https://hdl.handle.net/2117/84884 https://dx.doi.org/10.1016/j.egypro.2015.07.106 |
| Access Level: | acceso abierto |
| Palabra clave: | Solar cells IBC-BJ Laser doping selective emitter c-Si solar cells Cèl·lules solars Bateries solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser |
| Sumario: | Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layer deposited by atomic layer deposition (ALD). Emitters were fabricated with a light thermal phosphorus diffusion in order to reduce bulk and surface emitter recombination losses. Highly doped regions n++ (emitter) and p++ (base) were simultaneously created in a point-like structure using a pulsed Nd-YAG 1064 nm laser in the nanosecond regime by laser processing the dielectric layers. The results obtained for a cell, 3x3 cm2, are presented. Efficiencies up to 18.1% (Jsc = 39 mA/cm2, Voc = 632 mV, FF = 73.4%) have been achieved in our fabricated IBC cells. |
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