Study of the surface recombination velocity for ultraviolet and visible laser-fired contacts applied to silicon heterojunction solar cells

In this study, we investigate the effect of the laser-firing process on the back surface passivation of p-type silicon heterojunction solar cells. For that purpose, two different nanosecond laser sources radiating at ultraviolet (UV) (355 nm) and visible (532 nm) wavelengths are employed. First, we...

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Detalles Bibliográficos
Autores: Morales Vilches, Ana Belén, Voz Sánchez, Cristóbal|||0000-0002-0320-9606, Colina Brito, Mónica Alejandra|||0000-0003-3212-1926, Muñoz Martín, D., Martín García, Isidro|||0000-0001-8833-9057, Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, López Rodríguez, Gema|||0000-0003-4806-5180, Molpeceres Alvarez, Carlos, Alcubilla González, Ramón|||0000-0003-4827-4513
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/84961
Acceso en línea:https://hdl.handle.net/2117/84961
https://dx.doi.org/10.1109/JPHOTOV.2015.2417757
Access Level:acceso abierto
Palabra clave:Solar cells
Heterojunction solar cells
laser firing contact
passivation
surface recombination velocity
CRYSTALLINE SILICON
PARAMETERIZATION
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Descripción
Sumario:In this study, we investigate the effect of the laser-firing process on the back surface passivation of p-type silicon heterojunction solar cells. For that purpose, two different nanosecond laser sources radiating at ultraviolet (UV) (355 nm) and visible (532 nm) wavelengths are employed. First, we optimize the laser-firing process in terms of the electrical resistance of locally diffused point contacts. Specific contact resistance values as low as 0.91 and 0.57 m Omega center dot cm(2) are achieved for the visible and ultraviolet laser sources, respectively. In addition, the impact of the laser-firing process on the rear surface passivation is studied by analyzing the internal-quantum-efficiency curves of complete devices. Low surface recombination velocities in the range of 300 cm/s are obtained for the ultraviolet laser with a 1% fraction of contacted area. This value increases to about 700 cm/s for the visible laser, which indicates a significantly higher recombination at the contacted area. The best heterojunction solar cells with rear laser-fired contacts are obtained for the ultraviolet laser and reached a 17.5% conversion efficiency.