Cita APA

Crespo Yepes, A., Martin Martinez, J., Rothschild, A., Rodríguez Martínez, R., Nafria, M., & Aymerich Humet, X. (2011). Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric.

Citación estilo Chicago

Crespo Yepes, Albert|||0000-0003-4618-651X, Javier|||0000-0001-5938-5898 Martin Martinez, A. Rothschild, Rosana|||0000-0002-4565-6703 Rodríguez Martínez, Montserrat|||0000-0002-9549-2890 Nafria, y Xavier|||0000-0002-5874-6257 Aymerich Humet. Injected Charge to Recovery As a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric. 2011.

Cita MLA

Crespo Yepes, Albert|||0000-0003-4618-651X, et al. Injected Charge to Recovery As a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric. 2011.