Impedance characteristics of quantum well lasers

We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, T...

Descripción completa

Detalles Bibliográficos
Autores: Weisser, Stephan, Esquivias, Ignacio, Tasker, PJ, Ralston, John, Romero, Beatriz, Rosenzweig, Joseph
Tipo de recurso: artículo
Fecha de publicación:1994
País:España
Institución:Universidad Rey Juan Carlos
Repositorio:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
OAI Identifier:oai:burjcdigital.urjc.es:10115/12036
Acceso en línea:http://hdl.handle.net/10115/12036
Access Level:acceso abierto
Palabra clave:NONLINEAR GAIN
CIRCUIT
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
3307.07 Dispositivos láser
id ES_435bcf0ff23aef469e71f98cf1fc3294
oai_identifier_str oai:burjcdigital.urjc.es:10115/12036
network_acronym_str ES
network_name_str España
repository_id_str
spelling Impedance characteristics of quantum well lasersWeisser, StephanEsquivias, IgnacioTasker, PJRalston, JohnRomero, BeatrizRosenzweig, JosephNONLINEAR GAINCIRCUIT3307 Tecnología Electrónica3306.02 Aplicaciones Eléctricas3307.07 Dispositivos láserWe derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, The results of on-wafer measurements of the impedance of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time,Tecnología ElectrónicaIEEE201420141994info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10115/12036reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlosinstname:Universidad Rey Juan CarlosInglésAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:burjcdigital.urjc.es:10115/120362026-06-24T12:48:17Z
dc.title.none.fl_str_mv Impedance characteristics of quantum well lasers
title Impedance characteristics of quantum well lasers
spellingShingle Impedance characteristics of quantum well lasers
Weisser, Stephan
NONLINEAR GAIN
CIRCUIT
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
3307.07 Dispositivos láser
title_short Impedance characteristics of quantum well lasers
title_full Impedance characteristics of quantum well lasers
title_fullStr Impedance characteristics of quantum well lasers
title_full_unstemmed Impedance characteristics of quantum well lasers
title_sort Impedance characteristics of quantum well lasers
dc.creator.none.fl_str_mv Weisser, Stephan
Esquivias, Ignacio
Tasker, PJ
Ralston, John
Romero, Beatriz
Rosenzweig, Joseph
author Weisser, Stephan
author_facet Weisser, Stephan
Esquivias, Ignacio
Tasker, PJ
Ralston, John
Romero, Beatriz
Rosenzweig, Joseph
author_role author
author2 Esquivias, Ignacio
Tasker, PJ
Ralston, John
Romero, Beatriz
Rosenzweig, Joseph
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv NONLINEAR GAIN
CIRCUIT
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
3307.07 Dispositivos láser
topic NONLINEAR GAIN
CIRCUIT
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
3307.07 Dispositivos láser
description We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, The results of on-wafer measurements of the impedance of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time,
publishDate 1994
dc.date.none.fl_str_mv 1994
2014
2014
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10115/12036
url http://hdl.handle.net/10115/12036
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
instname:Universidad Rey Juan Carlos
instname_str Universidad Rey Juan Carlos
reponame_str BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
collection BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407018589093888
score 15,812429

Similares en LA Referencia