Impedance characteristics of quantum well lasers
We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, T...
| Autores: | , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Universidad Rey Juan Carlos |
| Repositorio: | BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos |
| OAI Identifier: | oai:burjcdigital.urjc.es:10115/12036 |
| Acceso en línea: | http://hdl.handle.net/10115/12036 |
| Access Level: | acceso abierto |
| Palabra clave: | NONLINEAR GAIN CIRCUIT 3307 Tecnología Electrónica 3306.02 Aplicaciones Eléctricas 3307.07 Dispositivos láser |
| Sumario: | We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, The results of on-wafer measurements of the impedance of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time, |
|---|