Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method

We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonance plasma method. Films with three different as-grown co...

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Detalhes bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, Martínez, F.L., Selle, B., Sieber, I.
Formato: artículo
Fecha de publicación:1998
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59293
Acesso em linha:https://hdl.handle.net/20.500.14352/59293
Access Level:acceso abierto
Palavra-chave:537
Chemical-Vapor-Deposition
Silicon-Nitride
Thin-Films
Defects
Alloys
Model.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59293
network_acronym_str ES
network_name_str España
repository_id_str
spelling Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance methodMartil De La Plaza, IgnacioGonzález Díaz, GermánMartínez, F.L.Selle, B.Sieber, I.537Chemical-Vapor-DepositionSilicon-NitrideThin-FilmsDefectsAlloysModel.ElectricidadElectrónica (Física)2202.03 ElectricidadWe have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonance plasma method. Films with three different as-grown compositions have been studied, namely x = 0.97, 1.43 and 1.55, Annealing effects were related to film composition. In films with the presence of both Si-H and N-H bonds (as-grown compositions x = 0.97 and 1.43), we found that a reorganization of bonds takes place at temperatures less than or equal to 500 degrees C, where the well-known cross linking reaction Si-Si + N-H --> Si-H + Si-N occurs without detectable release of hydrogen. In the same range of temperatures, an increase of the band gap was observed and attributed to Si-Si bond substitution for Si-H, but no changes in composition were detected. At higher temperatures (T greater than or equal to 600 degrees C), the optical gap decreases and both Si-H and N-H bonds are lost along with a release of hydrogen and nitrogen. For the films with an as-gown composition x = 1.55, we observe that the release of hydrogen only occurs at temperatures above 900 degrees C, but it is not accompanied by any loss of nitrogen. An increase of the optical gap until the release of hydrogen begins and a decrease thereafter is observed.Elsevier Science BVUniversidad Complutense de Madrid19981998-05-0119981998-05-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59293reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592932026-06-02T12:44:21Z
dc.title.none.fl_str_mv Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
title Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
spellingShingle Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
Martil De La Plaza, Ignacio
537
Chemical-Vapor-Deposition
Silicon-Nitride
Thin-Films
Defects
Alloys
Model.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
title_full Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
title_fullStr Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
title_full_unstemmed Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
title_sort Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Martínez, F.L.
Selle, B.
Sieber, I.
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Martínez, F.L.
Selle, B.
Sieber, I.
author_role author
author2 González Díaz, Germán
Martínez, F.L.
Selle, B.
Sieber, I.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Chemical-Vapor-Deposition
Silicon-Nitride
Thin-Films
Defects
Alloys
Model.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Chemical-Vapor-Deposition
Silicon-Nitride
Thin-Films
Defects
Alloys
Model.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonance plasma method. Films with three different as-grown compositions have been studied, namely x = 0.97, 1.43 and 1.55, Annealing effects were related to film composition. In films with the presence of both Si-H and N-H bonds (as-grown compositions x = 0.97 and 1.43), we found that a reorganization of bonds takes place at temperatures less than or equal to 500 degrees C, where the well-known cross linking reaction Si-Si + N-H --> Si-H + Si-N occurs without detectable release of hydrogen. In the same range of temperatures, an increase of the band gap was observed and attributed to Si-Si bond substitution for Si-H, but no changes in composition were detected. At higher temperatures (T greater than or equal to 600 degrees C), the optical gap decreases and both Si-H and N-H bonds are lost along with a release of hydrogen and nitrogen. For the films with an as-gown composition x = 1.55, we observe that the release of hydrogen only occurs at temperatures above 900 degrees C, but it is not accompanied by any loss of nitrogen. An increase of the optical gap until the release of hydrogen begins and a decrease thereafter is observed.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-05-01
1998
1998-05-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59293
url https://hdl.handle.net/20.500.14352/59293
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science BV
publisher.none.fl_str_mv Elsevier Science BV
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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