Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature
SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the N-rich films they are of the form . Si=(N-3), wherea...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1995 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59306 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59306 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Electron-Spin-Resonance Silicon-Nitride Defects PECVD. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the N-rich films they are of the form . Si=(N-3), whereas for the films with similar [N]/[Si] ratio but containing oxygen, the predominant defect is proposed to be Si=(Si2O), despite of the high N content and the low O content of these films. The spin density of the films has been related to the bonds that hydrogen establishes (either Si-H or N-H), with the maximum value corresponding to the minimum hydrogen content. Both maximum and minimum values, respectively, are obtained at the silicon percolation limit of the Si-Si bonds into the SiNx:H network, x similar to 1.10. |
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