Defect structure of SiNx : H films and its evolution with annealing temperature
The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is above the percolation threshold of the Si-Si bonds in...
| Autores: | , |
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| Formato: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59222 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/59222 |
| Access Level: | acceso abierto |
| Palavra-chave: | 537 Electron-Cyclotron-Resonance Deposited Silicon-Nitride Amorphous-Silicon Oxygen-Content. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is above the percolation threshold of the Si-Si bonds in the nitride lattice. The nature of this process is discussed and attributed to a thermally activated charge transfer between metastable defects. No such relaxation occurs in the films with a composition below the percolation threshold, possibly due to a positive correlation energy and a structural lack of flexibility. For higher annealing temperatures, an increase of the defect density is observed and associated with the thermal release of hydrogen. (C) 2000 American Institute of Physics. [S0021-8979(00)00516-8]. |
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