Aging compensation in a class-A high-frequency amplifier with DC temperature measurements

Altet Sanahujes, Josep|||0000-0002-6939-6475; Aragonès Cervera, Xavier|||0000-0003-1352-8675; Barajas Ojeda, Enrique|||0000-0002-2072-2268; Gisbert Beguer, Xavier; Martínez Domingo, Sergio; Mateo Peña, Diego|||0000-0001-5996-9092

Aging compensation in a class-A high-frequency amplifier with DC temperature measurements

One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradation process affects them by using a monitor circuit...

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Autores:	Altet Sanahujes, Josep\|\|\|0000-0002-6939-6475, Aragonès Cervera, Xavier\|\|\|0000-0003-1352-8675, Barajas Ojeda, Enrique\|\|\|0000-0002-2072-2268, Gisbert Beguer, Xavier, Martínez Domingo, Sergio, Mateo Peña, Diego\|\|\|0000-0001-5996-9092
Tipo de recurso:	artículo
Fecha de publicación:	2023
País:	España
Institución:	Universitat Politècnica de Catalunya (UPC)
Repositorio:	UPCommons. Portal del coneixement obert de la UPC
Idioma:	inglés
OAI Identifier:	oai:upcommons.upc.edu:2117/394621
Acceso en línea:	https://hdl.handle.net/2117/394621 https://dx.doi.org/10.3390/s23167069
Access Level:	acceso abierto
Palabra clave:	Electronic measurements Detectors Integrated circuits CMOS integrated circuits Aging Aging monitoring Aging compensation Temperature measurements Differential temperature sensors Electrònica--Mesuraments Circuits integrats Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics

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spelling	Aging compensation in a class-A high-frequency amplifier with DC temperature measurementsAltet Sanahujes, Josep\|\|\|0000-0002-6939-6475Aragonès Cervera, Xavier\|\|\|0000-0003-1352-8675Barajas Ojeda, Enrique\|\|\|0000-0002-2072-2268Gisbert Beguer, XavierMartínez Domingo, SergioMateo Peña, Diego\|\|\|0000-0001-5996-9092Electronic measurementsDetectorsIntegrated circuitsCMOS integrated circuitsAgingAging monitoringAging compensationTemperature measurementsDifferential temperature sensorsElectrònica--MesuramentsDetectorsCircuits integratsÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesuraÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadorsÀrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònicsOne of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradation process affects them by using a monitor circuit that tracks the evolution of the circuit performance. In this paper, we propose the use of DC temperature measurements in the proximity of the circuit to perform the monitoring of circuit performance degradation and as an observable variable to adjust the bias of the main devices to restore the degraded performance to the original values. To this end, we present experimental results obtained from nine samples of a standard CMOS integrated circuit containing a high-frequency class-A power amplifier and a differential temperature sensor. After accelerated aging, the gain of the amplifier is degraded up to 50%. We propose two different procedures to perform DC temperature measurements that allow tracking of the amplifier gain degradation due to aging and, by uniquely observing temperature readings, automatically set a new bias for the amplifier devices that restores the original amplifier gain. Whereas one of the procedures is able to restore the gain up to a certain limit, the second allows full gain restoration.This research was funded by Spanish MCIN/AEI/10.13039/501100011033, Project PID2019- 103869RB-C33.Peer ReviewedMultidisciplinary Digital Publishing Institute (MDPI)20232023-08-1020232023-10-04journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/394621https://dx.doi.org/10.3390/s23167069reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)InglésengAgencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2019-103869RB-C33 THE VARIABILITY CHALLENGE IN NANO-CMOS AND BEYOND-CMOS: NOVEL IC DESIGN PARADIGMS FOR MITIGATION AND EXPLOITATION (VIGILANT-UPC)open accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttps://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/3946212026-05-27T15:37:01Z
dc.title.none.fl_str_mv	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
title	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
spellingShingle	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements Altet Sanahujes, Josep\|\|\|0000-0002-6939-6475 Electronic measurements Detectors Integrated circuits CMOS integrated circuits Aging Aging monitoring Aging compensation Temperature measurements Differential temperature sensors Electrònica--Mesuraments Detectors Circuits integrats Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
title_short	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
title_full	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
title_fullStr	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
title_full_unstemmed	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
title_sort	Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
dc.creator.none.fl_str_mv	Altet Sanahujes, Josep\|\|\|0000-0002-6939-6475 Aragonès Cervera, Xavier\|\|\|0000-0003-1352-8675 Barajas Ojeda, Enrique\|\|\|0000-0002-2072-2268 Gisbert Beguer, Xavier Martínez Domingo, Sergio Mateo Peña, Diego\|\|\|0000-0001-5996-9092
author	Altet Sanahujes, Josep\|\|\|0000-0002-6939-6475
author_facet	Altet Sanahujes, Josep\|\|\|0000-0002-6939-6475 Aragonès Cervera, Xavier\|\|\|0000-0003-1352-8675 Barajas Ojeda, Enrique\|\|\|0000-0002-2072-2268 Gisbert Beguer, Xavier Martínez Domingo, Sergio Mateo Peña, Diego\|\|\|0000-0001-5996-9092
author_role	author
author2	Aragonès Cervera, Xavier\|\|\|0000-0003-1352-8675 Barajas Ojeda, Enrique\|\|\|0000-0002-2072-2268 Gisbert Beguer, Xavier Martínez Domingo, Sergio Mateo Peña, Diego\|\|\|0000-0001-5996-9092
author2_role	author author author author author
dc.subject.none.fl_str_mv	Electronic measurements Detectors Integrated circuits CMOS integrated circuits Aging Aging monitoring Aging compensation Temperature measurements Differential temperature sensors Electrònica--Mesuraments Detectors Circuits integrats Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
topic	Electronic measurements Detectors Integrated circuits CMOS integrated circuits Aging Aging monitoring Aging compensation Temperature measurements Differential temperature sensors Electrònica--Mesuraments Detectors Circuits integrats Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
description	One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradation process affects them by using a monitor circuit that tracks the evolution of the circuit performance. In this paper, we propose the use of DC temperature measurements in the proximity of the circuit to perform the monitoring of circuit performance degradation and as an observable variable to adjust the bias of the main devices to restore the degraded performance to the original values. To this end, we present experimental results obtained from nine samples of a standard CMOS integrated circuit containing a high-frequency class-A power amplifier and a differential temperature sensor. After accelerated aging, the gain of the amplifier is degraded up to 50%. We propose two different procedures to perform DC temperature measurements that allow tracking of the amplifier gain degradation due to aging and, by uniquely observing temperature readings, automatically set a new bias for the amplifier devices that restores the original amplifier gain. Whereas one of the procedures is able to restore the gain up to a certain limit, the second allows full gain restoration.
publishDate	2023
dc.date.none.fl_str_mv	2023 2023-08-10 2023 2023-10-04
dc.type.none.fl_str_mv	journal article http://purl.org/coar/resource_type/c_6501 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	https://hdl.handle.net/2117/394621 https://dx.doi.org/10.3390/s23167069
url	https://hdl.handle.net/2117/394621 https://dx.doi.org/10.3390/s23167069
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.relation.none.fl_str_mv	Agencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2019-103869RB-C33 THE VARIABILITY CHALLENGE IN NANO-CMOS AND BEYOND-CMOS: NOVEL IC DESIGN PARADIGMS FOR MITIGATION AND EXPLOITATION (VIGILANT-UPC)
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.publisher.none.fl_str_mv	Multidisciplinary Digital Publishing Institute (MDPI)
publisher.none.fl_str_mv	Multidisciplinary Digital Publishing Institute (MDPI)
dc.source.none.fl_str_mv	reponame:UPCommons. Portal del coneixement obert de la UPC instname:Universitat Politècnica de Catalunya (UPC)
instname_str	Universitat Politècnica de Catalunya (UPC)
reponame_str	UPCommons. Portal del coneixement obert de la UPC
collection	UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score	15,300724

Aging compensation in a class-A high-frequency amplifier with DC temperature measurements

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