BPF-based thermal sensor circuit for on-chip testing of RF circuits

A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metaloxide-semiconductor (MOS) t...

Full description

Bibliographic Details
Authors: Altet Sanahujes, Josep|||0000-0002-6939-6475, Barajas Ojeda, Enrique|||0000-0002-2072-2268, Mateo Peña, Diego|||0000-0001-5996-9092, Billong, Alexandre, Aragonès Cervera, Xavier|||0000-0003-1352-8675, Perpiñà Gilabet, Xavier, Reverter Cubarsí, Ferran|||0000-0003-1653-0519
Format: article
Publication Date:2021
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/360553
Online Access:https://hdl.handle.net/2117/360553
https://dx.doi.org/10.3390/s21030805
Access Level:Open access
Keyword:Electronic circuits
Detectors
CMOS thermal sensor
CMOS built-in sensor
CMOS integrated circuits
Measurement of RF CMOS circuits
Built-in test and measurement
Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
Description
Summary:A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metaloxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.