A comprehensive high-level model for CMOS-MEMS resonators
2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to serv...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/130997 |
| Acceso en línea: | https://hdl.handle.net/2117/130997 https://dx.doi.org/10.1109/JSEN.2018.2797526 |
| Access Level: | acceso abierto |
| Palabra clave: | Integrated circuits Detectors Co-simulation CMOS-MEMS Microresonators Behavioral modeling AHDL Circuits integrats Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors |
| Sumario: | 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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