Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Producción Científica

Detalles Bibliográficos
Autores: Vinuesa Sanz, Guillermo, González Ossorio, Óscar, García García, Héctor, Sahelices Fernández, Benjamín, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador, Kukli, Kaupo, Kull, M, Tarre, Aivar, Jõgiaas, Taivo, Tamm, Aile, Kasikov, Aarne
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2021
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/48633
Acceso en línea:https://doi.org/10.1016/j.sse.2021.108085
https://uvadoc.uva.es/handle/10324/48633
Access Level:acceso abierto
Palabra clave:RRAM
Hafnium oxide
Aluminium oxide
Hafnium-aluminum oxide
22 Física
33 Ciencias Tecnológicas
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repository_id_str
spelling Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devicesVinuesa Sanz, GuillermoGonzález Ossorio, ÓscarGarcía García, HéctorSahelices Fernández, BenjamínCastán Lanaspa, María HelenaDueñas Carazo, SalvadorKukli, KaupoKull, MTarre, AivarJõgiaas, TaivoTamm, AileKasikov, AarneRRAMHafnium oxideAluminium oxideHafnium-aluminum oxide22 Física33 Ciencias TecnológicasProducción CientíficaResistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.Ministerio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)Fondo Europeo de Desarrollo Regional "Pedidos emergentes en cuanto a cuántica y nanomateriales" (TK134)Estonian Research Agency (PRG753)Elsevier2021info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://doi.org/10.1016/j.sse.2021.108085https://uvadoc.uva.es/handle/10324/48633reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://www.sciencedirect.com/science/article/pii/S0038110121001301info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/486332026-06-13T12:44:47Z
dc.title.none.fl_str_mv Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
title Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
spellingShingle Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Vinuesa Sanz, Guillermo
RRAM
Hafnium oxide
Aluminium oxide
Hafnium-aluminum oxide
22 Física
33 Ciencias Tecnológicas
title_short Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
title_full Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
title_fullStr Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
title_full_unstemmed Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
title_sort Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
dc.creator.none.fl_str_mv Vinuesa Sanz, Guillermo
González Ossorio, Óscar
García García, Héctor
Sahelices Fernández, Benjamín
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Kukli, Kaupo
Kull, M
Tarre, Aivar
Jõgiaas, Taivo
Tamm, Aile
Kasikov, Aarne
author Vinuesa Sanz, Guillermo
author_facet Vinuesa Sanz, Guillermo
González Ossorio, Óscar
García García, Héctor
Sahelices Fernández, Benjamín
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Kukli, Kaupo
Kull, M
Tarre, Aivar
Jõgiaas, Taivo
Tamm, Aile
Kasikov, Aarne
author_role author
author2 González Ossorio, Óscar
García García, Héctor
Sahelices Fernández, Benjamín
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Kukli, Kaupo
Kull, M
Tarre, Aivar
Jõgiaas, Taivo
Tamm, Aile
Kasikov, Aarne
author2_role author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv RRAM
Hafnium oxide
Aluminium oxide
Hafnium-aluminum oxide
22 Física
33 Ciencias Tecnológicas
topic RRAM
Hafnium oxide
Aluminium oxide
Hafnium-aluminum oxide
22 Física
33 Ciencias Tecnológicas
description Producción Científica
publishDate 2021
dc.date.none.fl_str_mv 2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1016/j.sse.2021.108085
https://uvadoc.uva.es/handle/10324/48633
url https://doi.org/10.1016/j.sse.2021.108085
https://uvadoc.uva.es/handle/10324/48633
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://www.sciencedirect.com/science/article/pii/S0038110121001301
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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