Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors

In this work we present a comparative study on the electrical characteristics of polymorphous silicon (pm-Si:H) and polymorphous germanium (pm-Ge:H) thin films deposited by low frequency plasma enhanced chemical vapor deposition (LF-PECVD), aiming to use them as thermo sensing elements in uncooled m...

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Detalles Bibliográficos
Autores: MARIO MORENO MORENO, ALFONSO TORRES JACOME, Pedro Rosales Quintero, ANDREY KOSAREV, CLAUDIA REYES BETANZO, CARLOS ZUÑIGA ISLAS
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2012
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/2105
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2105
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Inspec/Polymorphous
info:eu-repo/classification/Inspec/Silicon
info:eu-repo/classification/Inspec/Germanium
info:eu-repo/classification/Inspec/Amorphous
info:eu-repo/classification/Inspec/Microbolometers
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
Descripción
Sumario:In this work we present a comparative study on the electrical characteristics of polymorphous silicon (pm-Si:H) and polymorphous germanium (pm-Ge:H) thin films deposited by low frequency plasma enhanced chemical vapor deposition (LF-PECVD), aiming to use them as thermo sensing elements in uncooled microbolometers. We studied th e effect of the deposition pressure on the film characteristics that are important for IR detection, as the activation energy (Ea), the thermal coefficient of resistance (TCR), the room temperature conductivity (σTR) and the film responsivity with IR radiation. Our results indicate that polymorphous films have advantages over boron doped a-Si:H, material which is currently employed as thermo-sensing element in commercial microbolometer arrays.