Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides
We demonstrate Ge-on-Si metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon oxynitride (SiOxNy) waveguides. The waveguide is placed on top of the photodetector and between the metal electrodes, evading the shading effect by metal electrodes, which is typical in surf...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2382 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2382 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Dielectric waveguides info:eu-repo/classification/Inspec/Electrodes info:eu-repo/classification/Inspec/Elemental semiconductors info:eu-repo/classification/Inspec/Ge-Si alloys info:eu-repo/classification/Inspec/Metal-semiconductor-metal structures info:eu-repo/classification/Inspec/Photodetectors info:eu-repo/classification/Inspec/Silicon compounds info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | We demonstrate Ge-on-Si metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon oxynitride (SiOxNy) waveguides. The waveguide is placed on top of the photodetector and between the metal electrodes, evading the shading effect by metal electrodes, which is typical in surface-illuminated MSM photodetectors. The devices showed responsivity of about 0.45 A/W for 80 μm long devices at 1550 nm. The photodetector with 1.5 μm electrode spacing showed 3 dB bandwidth of 2.0 GHz at -2V and 2 μA dark current. Further studies suggest that with a modified design the structure is capable of achieving 1 A/W responsivity and greater bandwidth. © 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773212] |
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