Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD
In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to ana...
| Autores: | , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2101 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2101 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Polymorphous info:eu-repo/classification/Inspec/Germanium info:eu-repo/classification/Inspec/Amorphous info:eu-repo/classification/Inspec/Plasma info:eu-repo/classification/Inspec/PECVD info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to analyze the surface roughness of the pm-Ge:H films, while transmission electron microscopy was used to observe the cross section. The temperature dependence of conductivity (σ(T)), deposition rate (Vd), activation energy (Ea) and the temperature coefficient of resistance (TCR) were extracted on the pm-Ge:H films deposited at different pressure values. An optimal pressure range was found, in order to produce pm-Ge:H films with high Ea and TCR which are key parameters for thermal detection applications. |
|---|