Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD

In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to ana...

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Bibliographic Details
Authors: MARIO MORENO MORENO, ALFONSO TORRES JACOME, Pedro Rosales Quintero, ANDREY KOSAREV, CARLOS ZUÑIGA ISLAS, CLAUDIA REYES BETANZO, Miguel Dominguez
Format: article
Status:Versión aceptada para publicación
Publication Date:2012
Country:México
Institution:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repository:Repositorio Institucional del INAOE
Language:English
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/2101
Online Access:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2101
Access Level:Open access
Keyword:info:eu-repo/classification/Inspec/Polymorphous
info:eu-repo/classification/Inspec/Germanium
info:eu-repo/classification/Inspec/Amorphous
info:eu-repo/classification/Inspec/Plasma
info:eu-repo/classification/Inspec/PECVD
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
Description
Summary:In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to analyze the surface roughness of the pm-Ge:H films, while transmission electron microscopy was used to observe the cross section. The temperature dependence of conductivity (σ(T)), deposition rate (Vd), activation energy (Ea) and the temperature coefficient of resistance (TCR) were extracted on the pm-Ge:H films deposited at different pressure values. An optimal pressure range was found, in order to produce pm-Ge:H films with high Ea and TCR which are key parameters for thermal detection applications.

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